GDDR6 PHY - TSMC12FFc With the advancement of artificial intelligence (AI), deep neural networks (DNN), ADAS, and high-performance computing (HPC), there is an ever-increasing demand for higher memory bandwidth. Along with the large amount of data generated by these applications, the memory sub-system plays a crucial role in the overall performance.
TSS GDDR6 PHY utilizes state-of-the-art architecture in full custom analog mixed-signal design to overcome the problem of long-term impedance drift and clock phase drift, allowing impedance and clock phase updates without the need to interrupt data traffic. The programmable timing PHY boundary combines flexibility with analog precision. The result is ultra low PHY read/write latency between memory controller and the GDDR6 DRAM without sacrificing performance.
The depressing news comes from TrendForce, which notes that graphics DRAM prices are expected to rise by 8% to 13% throughout the year. That will almost certainly.