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Process and Control Today | Innoscience to discuss datacenter applications and present new products and integrated GaN ICs at APEC 2024

Process and Control Today | Innoscience to discuss datacenter applications and present new products and integrated GaN ICs at APEC 2024
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Innoscience bidirectional VGaN HEMTs employed by OnePlus in battery protection board inside new high-performance smartphone – CIE

Innoscience bidirectional VGaN HEMTs employed by OnePlus in battery protection board inside new high-performance smartphone – CIE
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Innoscience bidirectional VGaN HEMTs employed by OnePlus in battery protection board inside new high-performance smartphone

Innoscience bidirectional VGaN HEMTs employed by OnePlus in battery protection board inside new high-performance smartphone
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OnePlus uses Innoscience bidirectional VGaN HEMTs

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Innoscience delivers compact, high-performance SolidGaN integrated half-bridge solution with driver – CIE

Innoscience delivers compact, high-performance SolidGaN integrated half-bridge solution with driver – CIE
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