Innoscience Technology News Today

12th February 2024 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP…

11th December 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a new range of low voltage discrete HEMTs in FCQFN packaging. Rated at 40 V, 100 V and 150 V, the ‘flip chip’ formatting makes it simple for engineers to use. Dr.…

Legrand, a global specialist in electrical and digital building infrastructures, is using Innosciences InnoGaN devices in its latest home power sockets to meet the increased power demand from products such as fast-charging Type A+C and USB power adapters.

29th August 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a distribution deal with CODICO GmbH, covering all European countries. CODICO is an abbreviation of ‘The COmponent Design-In COmpany’, and the company is proud to emphasize that it is its Design-In activities that set…

A recent patent lawsuit filed by US-based gallium nitride (GaN) technology specialist Efficient Power Conversion Corp (EPC) against Chinas top GaN devices vendor Innoscience Technology is likely to deter the latter from developing its sales abroad.

09th May 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs Innoscience’s 650V InnoGaN™ HEMT devices in a multilevel topology to address 850VDC applications such as e-mobility motor drivers,…

March 20th, 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, today launched the first in a new family of SolidGaN integrated GaN devices. ISG3201 is a complete half-bridge circuit including two 100V 3.2mΩ InnoGaN HEMTs and the required driver circuitry in an LGA…

World's largest 8-inch GaN-on-Si HEMT manufacturer highlights home, automotive and datacenter demos, presents diverse papers and introduces new products Booth 310, Orange County Convention Center, Orlando, Florida 6th March 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will be very visible at the upcoming…

14th December 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has demonstrated its ability to support high volume demand in GaN FETs globally, since it first started mass production on 8in wafer lines in 2019. The huge increase in the uptake of GaN power devices…

November 3, 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will play a full and active role at the upcoming Electronica exhibition. Denis Marcon General Manager, Europe, at Innoscience will take part in two forum discussions: Power Electronic Forum, 11:50am, Wednesday November 16th, Stand…