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Innoscience's Bi-GaN bi-directional GaN HEMTs used inside smartphones save space, increase efficiency and lower temperature rise – EEJournal

1st September 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, today announced the Bi-GaN series of bi-directional GaN HEMT devices that save space and facilitate fast charging without suffering from reliability-limiting and potentially dangerous rises in temperature that can sometimes be seen in traditional…
Innoscience Biga Innoscience Bigan Hemts Innoscience Technology Plug Conference

Innoscience and Silanna Semiconductor announce 65 W Active Clamp Flyback reference design with 30 W/in3 power density

May 11, 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, and Silanna Semiconductor, the San Diego, California company that offers technologies that deliver best-in-class power density and efficiency, demo'd a 65 W Active Clamp Flyback (AFC) reference design with 30 W/in3 uncased power density…
United States San Diego Innoscience America Ahsan Zaman Yi Sun Asian Center

Innoscience debuts in Europe at PCIM Europe as: 'World's Largest 8-inch GaN-on-Si device manufacturer' – EEJournal

3rd May 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will exhibit for the first time in Europe at the world's largest Power Electronics conference, PCIM Europe - 10 – 12 May 2022, Nuremberg Messe, Nuremberg, Germany. Dr Denis Marcon, General Manager, Innoscience Europe,…
Denis Marcon Innoscience Europe Industry Forum Power Electronics Innoscience Technology Nuremberg Messe

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Innoscience to discuss innovations in GaN at leading US power electronics event Applied Power Electronics Conference (APEC)

March 01, 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will take part in the Applied Power Electronics Conference (APEC) event held in Houston, Texas on March 20-24, 2022. Dr Denis Marcon, General Manager, Innoscience Europe, was chosen to be among the speakers at…
United States Denis Marcon Innoscience Europe Power Electronics Conference Technology Optimization Innoscience Technology

Innoscience delivers 40V bi-directional GaN HEMT with low RDS(on) for smart mobile devices, chargers and adapters

February 17 2022 - Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power solutions, today announced the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode high-electron-mobility-transistor (HEMT) for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company's advanced…
United States Denis Marcon Innoscience Europe Innoscience Technology Gallium Nitride General Manager

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