Innoscience's Bi-GaN bi-directional GaN HEMTs used inside smartphones save space, increase efficiency and lower temperature rise – EEJournal
1st September 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, today announced the Bi-GaN series of bi-directional GaN HEMT devices that save space and facilitate fast charging without suffering from reliability-limiting and potentially dangerous rises in temperature that can sometimes be seen in traditional…
Source: eejournal.com