Rad-hard transistors for space use developed by industry-education team
INDEPENDENCE, Mo. Engineering firm Intellectual Property Developers has introduced, together with a team from Auburn University, technology that uses zinc oxide thin-film transistors for use in radiation-hardened electronics applications in space, nuclear power facilities, high-altitude aviation, and other radiation-heavy environments.
Trademark Office Auburn University Property Developers Intellectual Property Developers Rad Hard Thin Film Transistor
Source: militaryembedded.com