Materials Science In Semiconductor Processing News Today

Electrical AFM is crucial in semiconductor manufacturing, offering nanoscale resolution for device inspection and material analysis.

In this article, AZoNano discusses the different nanolithography techniques that can be utilized for fabricating ceramic micro- and nanostructures.

Semiconductor chips have been getting smaller and smaller every year since the 1960s, with double the number of transistors fitting into the same chip space each year following the predicted trajectory of Moore’s Law.

Recent developments in wide-bandgap metal oxide semiconductors (MOSs)-based synaptic transistors have shown promising prospects to accomplish ultraviolet (UV) artificial vision.

Plastic pollution is a critical environmental issue which requires innovative approaches to mitigate the level of plastic waste entering the environment. Now, a review paper has been published in Materials Science in Semiconductor Processing evaluating the potential use of solid-state photocatalysis for tackling plastic pollution.

A study presents a comprehensive analysis of recent advancements in semiconductor metal oxide (SMO) gas detectors for identifying expelled acetone, which could help to replace invasive blood sugar monitoring.

A new studyt describes an efficient method for constructing novel surface-enhanced Raman scattering (SERS) substrates based on functionalized single-walled carbon nanotubes (SWCNTs) to detect heavy metal ions.

This article presents an overview of the semiconductor manufacturing process, with a particular focus on the use of etching technology, as well as the latest research that is happening in this field.

In a recent study published in the journal Material Science in Semiconductor Processing, researchers from Egypt developed (Bi2Se3)1-x(Bi2Te3)x films with excellent optical properties.

Understanding how the optical and electrical properties of nanostructures are influenced by different environmental conditions can aid the development of effective technologies in a range of applications. This paper focuses on the effect of controlled conditions on GaN nanostructures.