Field-Effect Transistors for High-Density Data Storage Devices
The University of Tokyo’s Institute of Industrial Science used a ferroelectric gate insulator and an atomic-layer-deposited oxide semiconductor channel to construct three-dimensional vertically structured field-effect transistors for high-density data storage devices.
Masaharu Kobayashi Zhuo Li University Of Tokyo Institute Industrial Science Property Utilization Support Program University Of Tokyo Industrial Science
Source: azom.com