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New method takes the uncertainty out of oxide semiconductor layering

New method takes the uncertainty out of oxide

New method takes the uncertainty out of oxide
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New Solution for Making Electronic Devices with Semiconductors

3D integrated circuits are an important aspect of increasing the efficiency of electronics to fulfill the high demands of consumers. They are continually being developed; however, it is difficult to translate theoretical discoveries into practical devices.

Field-Effect Transistors for High-Density Data Storage Devices

The University of Tokyo’s Institute of Industrial Science used a ferroelectric gate insulator and an atomic-layer-deposited oxide semiconductor channel to construct three-dimensional vertically structured field-effect transistors for high-density data storage devices.

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