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New method takes the uncertainty out of oxide semiconductor layering
Researchers from Institute of Industrial Science, The University of Tokyo develop a nanosheet oxide semiconductor for electronic devices
Kaito hikake
Masaharu kobayashi
Institute of industrial sciene
A nanosheet oxide semiconductor
Institute of industrial science
University of tokyo
Industrial science
Nanosheet oxide semiconductor
Gaox channel
Insnox electrode
Normally off operation
High mobility
Industrial sciene
New method takes the uncertainty out of oxide
New method takes the uncertainty out of oxide
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Kaito hikake
Masaharu kobayashi
Institute of industrial science
University of tokyo
A nanosheet oxide semiconductor
Institute of industrial sciene
Industrial science
Nanosheet oxide semiconductor
Gaox channel
Insnox electrode
Normally off operation
High mobility
Industrial sciene
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