Rambus Expands High-Performance Memory Subsystem Offerings with HBM2E Solution on Samsung 14/11nm
Share this article (PRNewsfoto/Rambus Inc.) SAN JOSE, Calif., April 21, 2021 /PRNewswire/ -- Rambus Inc. (NASDAQ: RMBS), a provider of industry-leading chips and silicon IP making data faster and safer, today announced the Rambus HBM2E memory interface subsystem, consisting of a fully-integrated PHY and controller, is silicon proven on Samsungs advanced 14/11nm FinFET process. Leveraging over 30 years of signal integrity expertise, the Rambus solution operates up to 3.2 Gbps, delivering 4...
Jongshin Shin Matt Jones Cori Pasinetti Rambus Corporate Communications Rambus Inc Design Platform Development At Samsung Electronics
Source: prnewswire.com