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(PRNewsfoto/Rambus Inc.)
SAN JOSE, Calif., April 21, 2021 /PRNewswire/ -- Rambus Inc. (NASDAQ: RMBS), a provider of industry-leading chips and silicon IP making data faster and safer, today announced the Rambus HBM2E memory interface subsystem, consisting of a fully-integrated PHY and controller, is silicon proven on Samsung's advanced 14/11nm FinFET process. Leveraging over 30 years of signal integrity expertise, the Rambus solution operates up to 3.2 Gbps, delivering 410 GB/s of bandwidth. This performance meets the terabyte-scale bandwidth needs of accelerators targeting the most demanding AI/ML training and high-performance computing (HPC) applications.
"Our partnership with Rambus brings together industry-leading memory interface design expertise with Samsung's state-of-the-art process and packaging technologies," said Jongshin Shin, vice president of Design Platform Development at Samsung Electronics. "Designers of AI and HPC systems can implement platforms using HBM2E memory leveraging Samsung's advanced 14/11nm process to achieve unmatched levels of performance."