Samsung Electronics unveils Foundry Vision
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Rambus Expands High-Performance Memory Subsystem Offerings with HBM2E Solution on Samsung 14/11nm
Share this article (PRNewsfoto/Rambus Inc.) SAN JOSE, Calif., April 21, 2021 /PRNewswire/ -- Rambus Inc. (NASDAQ: RMBS), a provider of industry-leading chips and silicon IP making data faster and safer, today announced the Rambus HBM2E memory interface subsystem, consisting of a fully-integrated PHY and controller, is silicon proven on Samsung's advanced 14/11nm FinFET process. Leveraging over 30 years of signal integrity expertise, the Rambus solution operates up to 3.2 Gbps, delivering 410 GB/s of bandwidth. This performance meets the terabyte-scale bandwidth needs of accelerators tar...
Source: prnewswire.com