Silicon IGBTs Aim at Electric Vehicle Inverters
Revised design will help reduce power losses to increase battery range and improve EV performance.
Source: designnews.com
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New Electronics - Renesas unveils Si IGBTs for Electric Vehicle inverters
Renesas Electronics has developed a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses.
Katsuya Konishi Renesa Igbts Renesa Power System Business Division Vice President Renesa Power System Business Reference Solution
Source: newelectronics.co.uk
Renesas Unveils New-Generation Si IGBTs for Electric Vehicle Inverters
TOKYO, Japan, August 30, 2022 ― Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next generation electric vehicle (EVs) inverters, AE5-generation IGBTs will…
Katsuya Konishi Renesa Igbts Renesas Electronics Corporation Renesa Power System Business Division Silicon Insulated Gate Bipolar Transistors Vice President
Source: eejournal.com