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Samsung Announces 3nm Process Node, the First with Gate-All-Around FETs

It appears that Samsung is the – ahem – first out of the gate with a gate-all-around (GAA) FET IC process technology. The company recently announced initial semiconductor production with its 3nm process node. Samsung’s trademarked name for its version of a GAAFET is “MBCFET,” which stands for “Multi-Bridge-Channel FET.” Since a picture is often…

New Electronics - Synopsys and Arm strengthen partnership

Synopsys and Arm Strengthen Partnership to Advance Next-Gen Mobile SoCs for Arm s Total Compute Solutions – EEJournal

MOUNTAIN VIEW, Calif., June 28, 2022 /PRNewswire/ Enabling mutual customers to deliver specialized compute, high performance and high efficiency for mobile applications including laptops, smartphones, gaming and augmented/virtual reality, Synopsys, Inc. (Nasdaq: SNPS) today announced that its design, verification and IP solutions are optimized to deliver maximum performance-per-watt for the latest Arm®v9 architecture-based SoCs. Synopsys' leading EDA and…

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