Page 2 - Solid State Circuits Conference News Today

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of complementary metal–oxide–semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of tra...

Close-up image of the sand grain-sized chip developed in the study. (Credit: David Baillot/University of California San Diego) In a recent study prese | Technology

AMD shared new fine-grained details about its second-gen 3D V-Cache chiplet and the Ryzen 7000 I/O Die.

RC oscillators can be small or accurate, and now that can be both after Delft University of Technology*, Silicon Integrated and Tsinghua University

At ISSCC 2023 in San Francisco, Belgian research lab Imec presented transistor designs shrunk beyond the capabilities of silicon. It argued that finfet

Intel has made a move from four bits per cell to demonstrate a 1.7Tbit NAND flash IC, which it described at ISSCC 2023 this week. Fabricated over 192

With their low losses, fast switching and high temperature tolerance, silicon carbide mosfets are now a viable option for high-current switching for use

At ISSCC this in San Francisco this week, the National Taiwan University revealed a processor custom designed to crunch the vast amount of data that

NeuralTree functions by extracting neural biomarkers.

Mahsa Shoaran of the Integrated Neurotechnologies Laboratory in the School of Engineering collaborated with Stéphanie Lacour in the Laboratory for Soft Bioelec