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February 21, 2022
Earlier this month, Intel revealed it had been investing in blockchain technology as part of its renewed strategy to develop “the most energy-efficient computing technologies at scale.”...
February 11, 2022
Intel intends to contribute to the development of blockchain technologies and will ship its first blockchain accelerator later this year.
January 21, 2022
Intel does not have had to develop the chip from scratch, considering that its SHA-256 Extensions are supported on Ice Lake processors and later.
January 20, 2022
SK hynix will detail its new 12-Hi (layer) HBM3 at up to 896GB/sec bandwidth, and super-fast GDDR6 @ 24Gbps at ISSCC 2022.
January 18, 2022
Crypto mining is loathed by gamers and anyone who cares about the environment, but that isn’t stopping Intel from getting into the
January 18, 2022
It looks like Intel wants to make a bigger push into the world of cryptocurrency, though not necessarily with its upcoming discrete GPU launch.
January 18, 2022
Intel could be planning to introduce its own crypto ASIC that is more energy-efficient than standard mining rigs.
December 7, 2021
Anantha Chandrakasan, dean of the MIT School of Engineering and Vannevar Bush Professor of EECS, has been named the recipient of the 2022 IEEE Mildred Dresselhaus Medal in recognition of his “contributions to ultralow-power circuits and systems, and leadership in academia and advancing diversity in the profession.”
March 14, 2021
Samsung demonstrates 3nm MBCFET chip: using nanochip structure to make transistors Samsung Electronics and TSMC are currently planning to develop 3nm process technology research and development. According to reports, at the IEEE International Solid-State Circuits Conference (ISSCC), Samsung engineers shared the manufacturing details of the upcoming 3nm GAE MBCFET chip. GAAFET transistors (gate full ring field-effect transistors) come in two forms in terms of structure, and they are an upgra...
March 9, 2021
It is expected that todays popular FinFET transistor design will give way to stacked nanosheet transistors in the coming years – for various design and technology reasons. TSMC plans to stick with FinFET for 3nm, but Samsung is bravely / dangerously forging ahead with plans for a transition to nanosheet transistors with its 3nm nodes, reports IEEE Spectrum. Samsung Electronics vice president, Taejoong Song, presented at the IEEE International Solid-State Circuits Conference earlier this month...