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Latest Vishay Intertechnology Fourth-Generation 600 V E Series MOSFET Provides Industry-Low RDS(ON)Qg FOM of 2 8 ΩnC

Latest Vishay Intertechnology Fourth-Generation 600 V E Series MOSFET Provides Industry-Low RDS(ON)*Qg FOM of 2 8 Ω*nC
forextv.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from forextv.com Daily Mail and Mail on Sunday newspapers.

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Brückenlose Totem-Pole-PFC: SiC und GaN im direkten Vergleich

Brückenlose Totem-Pole-PFC: SiC und GaN im direkten Vergleich
elektroniknet.de - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from elektroniknet.de Daily Mail and Mail on Sunday newspapers.

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Mit diskreten SiC-Transistoren: 200-kW-Umrichter erreicht 99,3 Prozent Effizienz

Mit diskreten SiC-Transistoren: 200-kW-Umrichter erreicht 99,3 Prozent Effizienz
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Percent efficiencyReference designPercent efficiency all picturesSwitching lossesOperating conditionsElectric carகுறிப்பு வடிவமைப்புஇயங்குகிறது நிபந்தனைகள்மின்சார கார்