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February 15, 2023
A consumer-facing robot like the robot barista Ella requires more thought than one thats in a factory, say, making cars, say its creators.
January 24, 2023
The biosensor, developed by researchers at NIST, Brown University and the French research institute CEA-Leti , identifies biomarkers by measuring how binding occurs between DNA strands and the device.
October 18, 2022
Crown Digital has appointed Arno Gruner as the group CFO.
January 25, 2021
New Transistor Structures At 3nm/2nm Gate-all-around FETs will replace finFETs, but the transition will be costly and difficult. Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-...
December 18, 2020
CEA-Leti Scientists Present In-Memory Computing Pathways for Edge-AI & Neural Networks with 3D Architectures & Resistive-RAM Papers at IEDM 2020 Explore Ways to Leverage 3D Technology’s Strengths For Lowering Device Energy Consumption and Energy Lost in Data Transmission GRENOBLE, France – Dec. 17, 2020 – CEA-Leti presented two papers this week at IEDM 2020 that confirm the advantages of combining 3D architectures and resistive-random-access-memories (RRAM) for in-memory computing (IMC)...
December 18, 2020
Our NanoNews Digest Sponsors Home > Press > CEA-Leti Scientists Present In-Memory Computing Pathways for Edge-AI & Neural Networks with 3D Architectures & Resistive-RAM: Papers at IEDM 2020 Explore Ways to Leverage 3D Technologys Strengths For Lowering Device Energy Consumption and Energy Lost in Data Transmission Abstract: CEA-Leti presented two papers this week at IEDM 2020 that confirm the advantages of combining 3D architectures and resistive-random-access-memories (RRAM) for in-memory co...