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New Transistor Structures At 3nm/2nm

New Transistor Structures At 3nm/2nm Gate-all-around FETs will replace finFETs, but the transition will be costly and difficult. Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-...
Andrew Cross Shogo Mochizuki Handel Jones Nerissa Draeger Ashish Agrawal Robert Clark

CEA-Leti Scientists Present In-Memory Computing Pathways for Edge-AI & Neural Networks with 3D Architectures & Resistive-RAM

CEA-Leti Scientists Present In-Memory Computing Pathways for Edge-AI & Neural Networks with 3D Architectures & Resistive-RAM Papers at IEDM 2020 Explore Ways to Leverage 3D Technology’s Strengths For Lowering Device Energy Consumption and Energy Lost in Data Transmission GRENOBLE, France – Dec. 17,  2020 – CEA-Leti presented two papers this week at IEDM 2020 that confirm the advantages of combining 3D architectures and resistive-random-access-memories (RRAM) for in-memory computing (IMC)...
Sylvain Barraud Elisa Vianello Eduardo Esmanhotto Cell For Neural Networks Stacked Nanosheet Transistors Monolithically Integrated Multiple

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Nanotechnology Now - Press Release: CEA-Leti Scientists Present In-Memory Computing Pathways for Edge-AI & Neural Networks with 3D Architectures & Resistive-RAM: Papers at IEDM 2020 Explore Ways to Leverage 3D Technology's Strengths For Lowering Device Energy Consumption and Energy Lost in Data Transmission

Our NanoNews Digest Sponsors Home > Press > CEA-Leti Scientists Present In-Memory Computing Pathways for Edge-AI & Neural Networks with 3D Architectures & Resistive-RAM: Papers at IEDM 2020 Explore Ways to Leverage 3D Technology’s Strengths For Lowering Device Energy Consumption and Energy Lost in Data Transmission Abstract: CEA-Leti presented two papers this week at IEDM 2020 that confirm the advantages of combining 3D architectures and resistive-random-access-memories (RRAM) for in-memory co...
Sylvain Barraud Elisa Vianello Eduardo Esmanhotto Energy Lost In Data Transmission Energy Lost In Data Transmission Grenoble Memory Computing Pathways For Neural Networks

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