Vishay Intertechnology has introduced two new 30V symmetric dual n-channel power MOSFETs that combine high and low side TrenchFET Gen V MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR 3x3FS package.
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MALVERN, Pa. -
May 24, 2021 - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a versatile new 30 V n-channel TrenchFET
® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK
® 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 m
Ω at 10 V, a 5 % improvement over the previous generation product. In addition, the device delivers on-resistance of 1.5 m
Ω at 4.5 V, while its 29.8 m
Ω nC on-resistance times gate charge at 4.5 V - a critical figure of merit (FOM) for MOSFETs used in switching applications - is one of the lowest on the market.