Toshiba Develops Industry's First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first[1] 2200V dual silicon carbide (SiC) ...
Visol Vrms Chiaki Nagasawa Toshiba Electronic Devices Storage Corporation Business Wire Electronic Devices Storage Corporation
Source: antaranews.com