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"High-Resolution Photoemission Study of Neutron-Induced Defects in Amor" by Francesca Peverini, Marco Bizzarri et al.

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defe...
Amorphous Hydrogenated Silicon X Ray Absorption
Source: uow.edu.au

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