Indian Institute of Science develops fully indigenous GaN po

Centre for Nano Science and Engineering and Department of Electrical Engineering produce 8A, 200V normally-off cascode GaN-on-Si HEMT

Related Keywords

India , Bengaluru , Karnataka , Srinivasan Raghavan , Manish Mandal , Digbijoy Nath , Digbijoyn Nath , Kaushik Basu , Ashutosh Vishwakarma , Indian Institute Of Science , Indian Institute Of Science Iisc , Iisc Centre For Nano Science , Nano Mission , Department Of Electrical Engineering , Indian Institute , Microelectronic Engineering , Nano Science , Two Inch Gan On Silicon , Electrical Engineering , Rijo Baby ,