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New Electronics - New gate driver IC for IGBTs and SiC MOSFE
New Electronics - New gate driver IC for IGBTs and SiC MOSFE
New Electronics - New gate driver IC for IGBTs and SiC MOSFETs driving EV inverters
Renesas Electronics has unveiled a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters.
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