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Renesas Introduces New Gate Driver IC for IGBTs and SiC MOSFETs Driving EV Inverters

The New Gate Driver IC Supports 1200V Power Devices with 3.75kVrms in Isolation Voltage

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Renesas Igbts , Akira Omichi , Renesa Automotive Analog Application Specific Business Division , Renesas Electronics Corporation , Electronics Corporation , Insulated Gate Bipolar Transistors , Silicon Carbide , Common Mode Transient Immunity , Vice President ,

New Electronics - New gate driver IC for IGBTs and SiC MOSFETs driving EV inverters

Renesas Electronics has unveiled a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters. ....

Renesas Igbts , Common Mode Transient Immunity ,