Renesas Introduces New Gate Driver IC for IGBTs and SiC MOSF

The New Gate Driver IC Supports 1200V Power Devices with 3.75kVrms in Isolation Voltage

Related Keywords

Renesas Igbts , Akira Omichi , Renesa Automotive Analog Application Specific Business Division , Renesas Electronics Corporation , Electronics Corporation , Insulated Gate Bipolar Transistors , Silicon Carbide , Common Mode Transient Immunity , Vice President , ,