(0) Ottawa, Ontario--(Newsfile Corp. - January 12, 2021) - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the release of two 650V half-bridge daughter cards (30A and 60A), which provide an ultra-versatile platform to evaluate GaN drivers and transistors. The evaluation cards are available in two power levels, up to 3kW (GS-EVB-HB-66508B-RN) and up to 6kW (GS-EVB-HB-66516T-RN) and include the Renesas RAA226110 low-side GaN FET driver. These cards are the industry's first to provide programmable overcurrent protection with adjustable thresholds and programmable source current for adjustable turn-on slew rate. To view the full announcement, including downloadable images, bios, and more, click here.