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Navitas' SiC Experts Take Center Stage at ICSCRM 2023

In-depth technical papers extend the boundaries of silicon carbide next-gen semiconductor performance across EV, data center, solar and appliance/industrial marketsTORRANCE, Calif., Sept. 14, 2023 . ....

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Navitas' SiC Experts Take Center Stage at ICSCRM 2023

TORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) Navitas Semiconductor (Nasdaq: NVTS) announced participation at the International Conferenc. ....

Nathaniel Walsh , Stephen Oliver , Vamsi Mulpuri , Sid Sundaresan , Siddarth Sundaresan , Aaditi Agarwal , Steven Smith , Ranbir Singh , Kailun Zhong , Sic Technology Operations , Navitas Semiconductor Nasdaq , Navitas Semiconductor , International Conference On Silicon Carbide , International Conference , Silicon Carbide , Related Materials , Generation Sic , Low Schottky Barrier , Jaehoon Park , Asic Power , Statistically Tight , Usic Technology , Navitas Semiconductor Limited , Investor Relations ,

Navitas' SiC Experts Take Center Stage at ICSCRM 2023

14.09.2023 - In-depth technical papers extend the boundaries of silicon carbide (SiC) next-gen semiconductor performance across EV, data center, solar and appliance/industrial marketsTORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) - Navitas Semiconductor . ....

Ranbir Singh , Sid Sundaresan , Vamsi Mulpuri , Nathaniel Walsh , Siddarth Sundaresan , Aaditi Agarwal , Kailun Zhong , Steven Smith , Navitas Semiconductor Nasdaq , Sic Technology Operations , Navitas Semiconductor , Generation Sic , Low Schottky Barrier , Jaehoon Park , Asic Power , Statistically Tight , Usic Technology , Navitas Semiconductor Limited ,

Navitas' SiC Experts Take Center Stage at ICSCRM 2023

In-depth technical papers extend the boundaries of silicon carbide (SiC) next-gen semiconductor performance across EV, data center, solar and. ....

Steven Smith , Nathaniel Walsh , Ranbir Singh , Aaditi Agarwal , Siddarth Sundaresan , Stephen Oliver , Kailun Zhong , Sid Sundaresan , Vamsi Mulpuri , Navitas Semiconductor Nasdaq , International Conference On Silicon Carbide , Navitas Semiconductor , Sic Technology Operations , International Conference , Silicon Carbide , Related Materials , Generation Sic , Low Schottky Barrier , Jaehoon Park , Asic Power , Statistically Tight , Usic Technology , Navitas Semiconductor Limited , Investor Relations ,

Toshiba Develops Industry's First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first[1] 2200V dual silicon carbide (SiC) . ....

Visol Vrms , Chiaki Nagasawa , Toshiba Electronic Devices Storage Corporation , Business Wire , Electronic Devices , Storage Corporation , Asic Power , Toshiba Electronic Devices , Device Sales ,