In-depth technical papers extend the boundaries of silicon carbide next-gen semiconductor performance across EV, data center, solar and appliance/industrial marketsTORRANCE, Calif., Sept. 14, 2023 .
14.09.2023 - In-depth technical papers extend the boundaries of silicon carbide (SiC) next-gen semiconductor performance across EV, data center, solar and appliance/industrial marketsTORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) - Navitas Semiconductor .
The development of a high-conductivity material by a team of researchers in China could significantly lower contact resistance and Schottky barrier height in crucial areas of electronic and optoelectronic microchips, opening the door for computer and digital imaging parts that use less power in relation to their performance than current chipsets.