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Navitas' SiC Experts Take Center Stage at ICSCRM 2023

14.09.2023 - In-depth technical papers extend the boundaries of silicon carbide (SiC) next-gen semiconductor performance across EV, data center, solar and appliance/industrial marketsTORRANCE, Calif., Sept. 14, 2023 (GLOBE NEWSWIRE) - Navitas Semiconductor . ....

Ranbir Singh , Sid Sundaresan , Vamsi Mulpuri , Nathaniel Walsh , Siddarth Sundaresan , Aaditi Agarwal , Kailun Zhong , Steven Smith , Navitas Semiconductor Nasdaq , Sic Technology Operations , Navitas Semiconductor , Generation Sic , Low Schottky Barrier , Jaehoon Park , Asic Power , Statistically Tight , Usic Technology , Navitas Semiconductor Limited ,

Low-Power, High-Performance Electronics with Nanosheet Material

The development of a high-conductivity material by a team of researchers in China could significantly lower contact resistance and Schottky barrier height in crucial areas of electronic and optoelectronic microchips, opening the door for computer and digital imaging parts that use less power in relation to their performance than current chipsets. ....

Dong Li , Anlian Pan , Skyla Baily , College Of Materials Science , Hunan University , Nano Research , Hunan University College Of Materials Science , Performance Electronics , High Performance Electronics , Nanosheet Material , Materials Science , Waals Contacts , Low Schottky Barrier , Bismuth Telluride ,