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Sandia team develops GaN diode that is significant step toward protecting grid from EMPs

Scientists from Sandia National Laboratories have developed a new gallium-nitride (GaN) diode that can shunt excess electricity within a few billionths of a second while operating at a record-breaking 6,400 volts a significant step towards protecting the nation’s electric grid from an electromagnetic pulse (EMP). The team published the fabrication and. ....

Mary Crawford , Andrew Allerman , Bob Kaplar , Mary Crawforda Sandia , National Institute Of Standards , Naval Research Laboratory , Sonrisa Research , Stanford University , Sandia National Laboratories , Sandia Senior Scientist , Jack Flicker , Brendan Gunning , National Institute ,