GaN-on-Sapphire 1200V FET model and datasheet
Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET - TP120H070WS FET
Source: electronicsweekly.com
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Simulation Model of Industry's First 1200 V GaN-on-Sapphire Device Released by Transphorm
Device Readies Transphorm’s Innovative Normally-off GaN Platform for Adoption in Next Generation Automotive and 3-Phase Power SystemsGOLETA, Calif.--(BUSINESS
Source: collisionrepairmag.com
Transphorm, Inc.: Simulation Model of Industry's First 1200 V GaN-on-Sapphire Device Released by Transphorm
Device Readies Transphorm's Innovative Normally-off GaN Platform for Adoption in Next Generation Automotive and 3-Phase Power Systems Transphorm, Inc. (Nasdaq: TGAN)-global leader in fundamentally
Source: finanznachrichten.de