Comb-like etching regulated growth for large-area graphene nanoribbon arrays
Credit: @Science China Press The rapid development of silicon-based transistors leads to its integration getting closer to the limit of Moore's law. Graphene is expected to become the next generation of mainstream chip materials due to its ultra-high carrier mobility. However, it is difficult to obtain a high on/off current ratio for intrinsic graphene-based transistor owing to the absence of bandgap. Graphene nanoribbons, which possess a tunable bandgap and unique optoelectrical properties, have attracted extensive attention and exploration. Nowadays, the preparation of graphene nanoribbons ...