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ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other high-speed switching devices. While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of control ICs, which are responsible… ....

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ROHM Establishes Ultra-High-Speed Control IC Technology

Greater energy savings and miniaturization in power supply applications by combining GaN devices and control ICs. ....

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ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices

ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices
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Yusuke Mori , Santa Clara , Co Ltd , School Of Engineering , Osaka University , Semiconductor Electronics Achievement Award Isamu Akasaki , Civic Technology , Ministry Of Education , Osaka University Graduate School Of Engineering , Nano Pulse Control , Nano Pulse , Factory Automation , Graduate School , Impulse Control , Encouragement Award , Future Creation Invention , Isamu Akasaki Award ,