ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices
Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other high-speed switching devices. While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of control ICs, which are responsible…
Source: eejournal.com