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ROHM Completes Demonstration of Manufacturing Process Optimization by Applying Quanmatic's ... - Vimarsana News

ROHM Completes Demonstration of Manufacturing Process Optimization by Applying Quanmatic's ...

Santa Clara, CA and Kyoto, Japan, Dec. 14, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor and Quanmatic have been collaborating since January 2023 to introduce quantum technology into the EDS [1]

ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices - Vimarsana News

ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of

ROHM's New 600V Super Junction MOSFETs Combine Class-Leading Noise Characteristics with the ... | Region - Vimarsana News

ROHM's New 600V Super Junction MOSFETs Combine Class-Leading Noise Characteristics with the ... | Region

Santa Clara, CA and Kyoto, Japan, July 13, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the addition of three new models, the R60xxRNx series, to its PrestoMOS™ lineup of

ROHM Establishes QuiCur™ Technology that Maximizes the Response Performance of Power Supply ICs - Vimarsana News

ROHM Establishes QuiCur™ Technology that Maximizes the Response Performance of Power Supply ICs

Press release content from Globe Newswire. The AP news staff was not involved in its creation.

Source: apnews.com
ROHM Starts Production of 150V GaN HEMTs: Featuring Breakthrough 8V Withstand Gate Voltage - Vimarsana News

ROHM Starts Production of 150V GaN HEMTs: Featuring Breakthrough 8V Withstand Gate Voltage

Press release content from Globe Newswire. The AP news staff was not involved in its creation.

Source: apnews.com