OnePlus uses Innoscience bidirectional VGaN HEMTs
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Source: compoundsemiconductor.net
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Innoscience delivers compact, high-performance SolidGaN integrated half-bridge solution with driver
March 20th, 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, today launched the first in a new family of SolidGaN integrated GaN devices. ISG3201 is a complete half-bridge circuit including two 100V 3.2mΩ InnoGaN HEMTs and the required driver circuitry in an LGA…
Source: eejournal.com
Innoscience and Silanna Semiconductor announce 65 W Active Clamp Flyback reference design with 30 W/in3 power density
May 11, 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, and Silanna Semiconductor, the San Diego, California company that offers technologies that deliver best-in-class power density and efficiency, demo'd a 65 W Active Clamp Flyback (AFC) reference design with 30 W/in3 uncased power density…
Source: eejournal.com