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Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements - Vimarsana News

Innoscience and University of Bern develop multilevel topology reference demo to address 850 VDC applications with 650V GaN fulfilling EV and industrial requirements

09th May 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs Innoscience’s 650V InnoGaN™ HEMT devices in a multilevel topology to address 850VDC applications such as e-mobility motor drivers,…

Innoscience delivers compact, high-performance SolidGaN integrated half-bridge solution with driver - Vimarsana News

Innoscience delivers compact, high-performance SolidGaN integrated half-bridge solution with driver

March 20th, 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, today launched the first in a new family of SolidGaN integrated GaN devices. ISG3201 is a complete half-bridge circuit including two 100V 3.2mΩ InnoGaN HEMTs and the required driver circuitry in an LGA…

Innoscience to demonstrate that GaN is all around us at APEC - Vimarsana News

Innoscience to demonstrate that GaN is all around us at APEC

World's largest 8-inch GaN-on-Si HEMT manufacturer highlights home, automotive and datacenter demos, presents diverse papers and introduces new products Booth 310, Orange County Convention Center, Orlando, Florida 6th March 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will be very visible at the upcoming…

Innoscience leads global shipment of GaN Power devices as WBG market scales up exponentially - Vimarsana News

Innoscience leads global shipment of GaN Power devices as WBG market scales up exponentially

14th December 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has demonstrated its ability to support high volume demand in GaN FETs globally, since it first started mass production on 8in wafer lines in 2019. The huge increase in the uptake of GaN power devices…

World's largest 8-inch GaN-on-Si IDM to debut at Electronica with new parts, new demos and keynote presentations – EEJournal - Vimarsana News

World's largest 8-inch GaN-on-Si IDM to debut at Electronica with new parts, new demos and keynote presentations – EEJournal

November 3, 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will play a full and active role at the upcoming Electronica exhibition. Denis Marcon General Manager, Europe, at Innoscience will take part in two forum discussions: Power Electronic Forum, 11:50am, Wednesday November 16th, Stand…