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A University of Minnesota Twin Cities-led team has developed a first-of-its-kind, breakthrough method that makes it easier to create high-quality metal oxide thin films out of "stubborn" metals that have historically been difficult to synthesize in an atomically precise manner.
A University of Minnesota Twin Cities-led team has developed a first-of-its-kind breakthrough method that makes it easier to create high-quality metal oxide films that are important for various next generation applications such as quantum computing and microelectronics.
A University of Minnesota Twin Cities-led team has developed a first-of-its-kind breakthrough method that makes it easier to create high-quality metal oxide films that are important for various next generation applications such as quantum computing and microelectronics.
E-Mail When you save an image to your smartphone, those data are written onto tiny transistors that are electrically switched on or off in a pattern of "bits" to represent and encode that image. Most transistors today are made from silicon, an element that scientists have managed to switch at ever-smaller scales, enabling billions of bits, and therefore large libraries of images and other files, to be packed onto a single memory chip. But growing demand for data, and the means to store them, is driving scientists to search beyond silicon for materials that can push memory devices to higher...