Live Breaking News & Updates on Kk Physics Of Semiconductor Devices

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of complementary metal–oxide–semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-the-art fin field-effect transistors. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of FETs with sub-10-nanometre gate length based on a hierarchical framework established for FET scaling. We focus our evaluation on identifying the most promising sub-10-nanometre-gate-length MOSFETs based on the ....

Ch Ungch Ong Bukto , South Korea , Cheju Do , Sri Lanka , Le Royer , Monte Carlo , C King Liu , Nano Lett , Si Mosfets , Japan Society Of Applied Physics , Device Research Conference , International Electron Devices Meeting , Kk Physics Of Semiconductor Devices , International Reliability Physics Symposium , Proceedings International Symposium On Quality Electronic Design , International Solid , Technology Symposium , Electron Devices Meeting , Solid State Circuits , Electron Devices , International Roadmap , Semiconductor Devices , Devices Soc , Device Lett , Electon Devices , Silicon Nanoelectronics Workshop ,