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New Electronics - Infineon looks to redefine power density and efficiency in AI server power supplies - Vimarsana News

New Electronics - Infineon looks to redefine power density and efficiency in AI server power supplies

Infineon Technologies has announced that it is to extend the development of SiC MOSFETs to voltages below 650 V.

Infineon unveils 400V CoolSiC MOSFETs - Vimarsana News

Infineon unveils 400V CoolSiC MOSFETs

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Infineon unveils CoolSiC™ MOSFETs 400 V redefining power density and efficiency in AI server power supplies - Vimarsana News

Infineon unveils CoolSiC™ MOSFETs 400 V redefining power density and efficiency in AI server power supplies

With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand of high-level GPUs, which could consume 2 kW and more per chip by the end of the decade. These needs, as well as the emergence of increasingly demanding applications and the associated specific customer requirements have prompted Infineon Techn...

Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications - Vimarsana News

Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications

12th February 2024 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP…

The future transistors - Vimarsana News

The future transistors

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of complementary metal–oxide–semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-...

Source: nature.com