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Frequency-to-Digital Converter for MEMS Resonators IP Core

The MVFD01 is a programmable frequency-to-digital converter that is designed to be easily integrated with MEMS resonators. The chip features a versatile . ....

Mems Resonator , Ems Oscillator , Requency To Digital , Requency To Digital Converter For Mems Resonators , P Core , Ilicon Ip , Emiconductor Ip ,

MEMS-based Clock Generator with On-chip Temperature Compensation

The MVCLK02 is a high-precision and programmable clock generator circuit, with a wide output frequency range. The chip contains a versatile MEMS oscillator . ....

Mems Resonator , Ems Oscillator , Requency To Digital , Clock Generator , Ems Based Clock Generator With On Chip Temperature Compensation , P Core , Ilicon Ip , Emiconductor Ip ,

"AlScN-Based Dual-Mode Devices with Temperature Compensated Strategy an" by Mengke Qi, Menghui Li et al.

MEMS resonators with interdigital transducer (IDT) based on aluminum nitride (AlN) thin-film (a few micrometers thickness) materials gradually arouse researchers' interest due to their ability to excite multiple modes of acoustic waves. However, the low electromechanical coupling coefficient is still one of the main reasons that limit the AlN-based resonators. In this article, we demonstrate a design journey for 10% scandium-doped AlN-based dual-mode acoustic wave resonators. Also, we investigated the influence of stack architectures with and without introduced AlN interlays, as well as the influence of stacked film thicknesses, on the performance of resonators. Simulation results show that changes in the SiO2 film thickness have different effects on the TCF of the two acoustic wave modes, providing a way for sensors to decouple two parameters that jointly affect the frequency drift. Moreover, measured results show that the introduced AlN interlayer (AlN-IL) induces a better cryst ....

Aluminum Nitride Interlayer Aln Il , Oupling Coefficient , Mems Resonator , Candium Doped Aln Alscn , Temperature Effect ,