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MEMS resonators with interdigital transducer (IDT) based on aluminum nitride (AlN) thin-film (a few micrometers thickness) materials gradually arouse researchers' interest due to their ability to excite multiple modes of acoustic waves. However, the low electromechanical coupling coefficient is still one of the main reasons that limit the AlN-based resonators. In this article, we demonstrate a design journey for 10% scandium-doped AlN-based dual-mode acoustic wave resonators. Also, we investigated the influence of stack architectures with and without introduced AlN interlays, as well as the influence of stacked film thicknesses, on the performance of resonators. Simulation results show that changes in the SiO2 film thickness have different effects on the TCF of the two acoustic wave modes, providing a way for sensors to decouple two parameters that jointly affect the frequency drift. Moreover, measured results show that the introduced AlN interlayer (AlN-IL) induces a better cryst ....

Aluminum Nitride Interlayer Aln Il , Oupling Coefficient , Mems Resonator , Candium Doped Aln Alscn , Temperature Effect ,