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Field-Effect Transistors for High-Density Data Storage Devices

The University of Tokyo’s Institute of Industrial Science used a ferroelectric gate insulator and an atomic-layer-deposited oxide semiconductor channel to construct three-dimensional vertically structured field-effect transistors for high-density data storage devices. ....

Masaharu Kobayashi , Zhuo Li , University Of Tokyo Institute Industrial Science , Property Utilization Support Program , University Of Tokyo , Industrial Science , Construct Field Effect Transistors , High Density Data Storage , Big Data , Study First Author , Study Senior Author , Nanoelectronics Workshop , Vertical Channel , Field Induced Polar Axis Alignment , High Density Memory ,

Building Up New Data-Storage Memory

Building Up New Data-Storage Memory
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Masaharu Kobayashi , Zhuo Li , Property Utilization Support Program , University Of Tokyo , Institute Of Industrial Science , Industrial Science , Big Data , Hafnium Oxide , Nanoelectronics Workshop , Vertical Channel , Field Induced Polar Axis Alignment ,