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BBCNEWS Asia Business Report July 7, 2017 - Vimarsana News

BBCNEWS Asia Business Report July 7, 2017

On safety grounds, and in some cases residents are not getting enough to eat or drink. Now on bbc news, all the latest Business News live from singapore. Despite all the scandals, samsung still appears to be making a lot of money. And the 620 meets in germany. We look at how americas protectionist stance is affecting its global position. Hello and welcome to Asia Business report. I am sharanjit welcome to Asia Business report. I am shara njit leyl. Welcome to Asia Business report. I am sharanjit leyl. From exploding mobile phone batteries to its Chief Executive being behind bars, samsung has h...

Samsung to reveal superfast DDR5 memory chip — 8.0Gbps per pin, 32Gb module approached GDDR5X speeds with 128GB memory modules likely to appear - Vimarsana News

Samsung to reveal superfast DDR5 memory chip — 8.0Gbps per pin, 32Gb module approached GDDR5X speeds with 128GB memory modules likely to appear

Offers double the capacity of 16Gb DDR5 DRAM in the same package size

Samsung's arch-rival presents HBM3E memory chip that could power Nvidia's Blackwell B100 AI GPU — with 16 layers, 48GB and 10.24Gbps transfer rate, this may well be the key to make ChatGPT 6 live - Vimarsana News

Samsung's arch-rival presents HBM3E memory chip that could power Nvidia's Blackwell B100 AI GPU — with 16 layers, 48GB and 10.24Gbps transfer rate, this may well be the key to make ChatGPT 6 live

SK hynix's new HBM3E chip could be a good choice for Nvidia

Exclusive: Samsung to showcase the world's fastest GDDR7 memory next month — 37 Gbps is a big improvement for GPU but others are catching up - Vimarsana News

Exclusive: Samsung to showcase the world's fastest GDDR7 memory next month — 37 Gbps is a big improvement for GPU but others are catching up

GDDR7 offers ways to optimize memory efficiency and power consumption

Field-Effect Transistors for High-Density Data Storage Devices - Vimarsana News

Field-Effect Transistors for High-Density Data Storage Devices

The University of Tokyo’s Institute of Industrial Science used a ferroelectric gate insulator and an atomic-layer-deposited oxide semiconductor channel to construct three-dimensional vertically structured field-effect transistors for high-density data storage devices.

Source: azom.com