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JEDEC publishes guidelines for reverse-bias reliability evaluation of GaN power conversion devices

Published: January 30, 2024

Suggested stress conditions and test parameters for evaluating TDB reliability of GaN power transistors

Source: semiconductor-today.com

Related Topics:

United StatesKurt SmithRon BarrTask GroupWide Bandgap Power Conversion Semiconductor CommitteePower Electronics Conference ExpositionSolid State Technology AssociationEstate TechnologyReverse Bias Reliability EvaluationGallium Nitride Power ConversionNitride SubcommitteePower Conversion SemiconductorHigh Temperature Reverse Bias StressApplication SpecificGan Focused GuidelineApplied Power Electronics ConferenceLong Beach