OKI develops GaN lift off/bonding technology
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Adoption of vertical GaN power devices to enable breakdown voltages of 1800V
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ShinEtsu Chemical Co. Ltd. Head Office Tokyo President Yasuhiko Saitoh has determined that QST Qromis Substrate Technology substrate1 is an essential material for the social implementation of highperformance energyefficient GaN gallium nitride power devices and the company will promote the development and launching on the market of these products.
TOKYO, September 05, 2023--Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh) has determined that QST® (Qromis Substrate Technology) substrate*1 is an essential material for the social implementation of high-performance, energy-efficient GaN (gallium nitride) power devices, and the company will promote the development and launching on the market of these products.