Soctera improves GaN HEMT thermal performance
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Source: compoundsemiconductor.net
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Soctera Demonstrates Superior Thermal Performance in GaN HEMTs For Next-Generation Telecommunications and Radar Solutions
/PRNewswire/ -- Soctera, a developer of III-nitride power amplifiers, has demonstrated high-electron-mobility transistors (HEMTs) exhibiting a peak surface...
Source: prnewswire.com
Soctera demos superior thermal performance in GaN HEMTs for next-gen telecoms and radar
Third-party-verified III-nitride transistors, fabricated on 4-inch wafers produced at IQE, moving towards commercial production with standard foundry processes
Source: semiconductor-today.com