Leti highlights progress in GaN power electronics
Leti highlights progress in GaN power electronics Micro/nanotechnology R&D center CEA-Leti of Grenoble, France says that two complementary research papers presented at the 66th IEEE International Electron Devices Meeting (IEDM 2020) confirm that its approach to gallium nitride (GaN) technologies is on track to overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems. Researchers recounted experiments with variations of high-electron-mobility transistors (HEMTs) based...
Source: semiconductor-today.com