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December 18, 2020 CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses GRENOBLE, France – Dec. 16,  2020 – Two complementary research papers from CEA-Leti confirmed that the institute’s approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conv...

Our NanoNews Digest Sponsors Home > Press > CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses Abstract: Two complementary research papers from CEA-Leti confirmed that the institute’s approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversio...

Leti highlights progress in GaN power electronics Micro/nanotechnology R&D center CEA-Leti of Grenoble, France says that two complementary research papers presented at the 66th IEEE International Electron Devices Meeting (IEDM 2020) confirm that its approach to gallium nitride (GaN) technologies is on track to overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems. Researchers recounted experiments with variations of high-electron-mobility transistors (HEMTs) based...