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CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices

December 18, 2020
CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices
Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses
GRENOBLE, France – Dec. 16, 2020 – Two complementary research papers from CEA-Leti confirmed that the institute’s approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems.
In papers presented at IEDM 2020, scientists recounted experiments with variations of high-electron- mobility transistors (HEMT) based on gallium nitride-on-silicon (GaN-on-Si), called GaN-on-Si HEMT. GaN-based semiconductors improve both performance and reliability of increasingly compact power converters compared to silicon, and AIGaN/GaN HEMTs have shown ....

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Nanotechnology Now - Press Release: CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses

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Home > Press > CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses
Abstract:
Two complementary research papers from CEA-Leti confirmed that the institutes approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems.
CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses ....

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